UM6K1N |
RFQ for UM6K1N Required Field |
 |
| Technical/Catalog Information | UM6K1NTN |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 100mA |
| Rds On (Max) @ Id, Vgs | 8 Ohm @ 10mA, 4V |
| Input Capacitance (Ciss) @ Vds | 13pF @ 5V |
| Power - Max | 150mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | UM6K1NTN UM6K1NTN UM6K1NTNTR ND UM6K1NTNTRND UM6K1NTNTR |
| Product | Manufacturers | Pack | D/C |
| UM6K1N | - | SOT363 | - |
Typical Application |
Features |
| Interfacing, switching (30V, 100mA) | 1) Two 2SK3018 transistors in a single UMT package.2) The MOSFET elements are independent, eliminating interference.3) Mounting cost and area can be cut in half.4) Low on-resistance.5) Low voltage drive (2.5V) makes this device ideal for portable equipment. |
|
Parameter |
Symbol |
Value |
Unit | |
|
Drain-source voltage |
VCE |
30 |
V | |
|
Drain-source |
Continues |
IC |
100 |
mA
|
| pulsed | ||||
|
Revserse Drain current |
Continues |
I Cpul s |
200 | |
| pulsed | ||||
|
- |
100
| |||
|
Gate-emitter voltage |
VGE |
200 |
mA | |
|
Gate-source voltage |
EAS |
±20 |
V | |
|
Total power dissipaton(Tc=25) |
tSC |
150 |
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